[Analysis Case] Thermal Desorption Gas Analysis of SiN Film by TDS
It is possible to evaluate the surface-adsorbed gas on the thin film and the desorbed gas from within the film.
The TDS analysis results regarding the SiN film on the Si substrate are presented. In the low-temperature range up to around 100°C, there is little desorption, indicating that there were few adsorbed components on the surface of the sample. On the other hand, as the temperature of the sample increases, it can be observed that m/z 2 (H2), m/z 18 (H2O), and m/z 27 (C2H3: organic fragment components) are being desorbed. TDS analysis conducted under high vacuum (1E-7 Pa) is effective for evaluating the adsorbed gas components on the film surface and trace gas components within the film.
- 企業:一般財団法人材料科学技術振興財団 MST
- 価格:Other